Title :
GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION
Author :
Elizabeth C. Dickey استاد مشاور , Venkatraman Gopalan استاد مشاور , Thomas N. Jackson استاد مشاور , Darrell G. Schlom استاد راهنما
University :
The Pennsylvenia State University
Major :
Materials Science and Engineering
Keyword :
High-k , Molecular-beam epitaxy , LaAlO3 , LaScO3 , Sc2O3 , La2O3 , alternative gate dielectrics , molecular-beam deposition
