Title :
A Novel In-Situ Method for Inhibiting Surface Roughening during the Thermal Oxide Desorption Etching of Silicon and Gallium Arsenide
Author :
Peter J. Gielisse استاد مشاور , Reginald J. Perry استاد مشاور , Jim. P. Zheng استاد راهنما
University :
The Florida State University
Major :
PhD )Electrical and Computer Engineering, Department of(
Keyword :
Gallium , GaAS , Desorption , arsenide , thermal , Silicon
