DocumentCode :
21577
Title :
Multi-Level Modeling of Total Ionizing Dose in a-SiO2: First Principles to Circuits
Author :
Kenneth F. Galloway استاد مشاور , Daniel M. Fleetwood استاد مشاور , Ronald D. Schrimpf استاد راهنما
University :
Vanderbilt Univerisyt
Grade :
نامعلوم
Major :
PhD )Electrical Engineering(
Number of pages :
0
Publish Date :
2003
Keyword :
ab-initio , Defects , radiation , first principles , circuits , compact models
Note :
01
Language :
انگليسي
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=17&DC=21577
