DocumentCode :
22584
Title :
Si-SiO2 interface behavior in n-MOSFETs with screening potential during high-field injection
Author :
Misra Durgamadhab استاد راهنما , Tsybeskov Leonid استاد مشاور
University :
Van Houten Library )new Jersey Institute Of Technology(
Grade :
نامعلوم
Major :
Master of Science )Department of Electrical and Computer Engineering(
Number of pages :
0
Publish Date :
2004
Keyword :
n-channel MOSFETs , Hot carrier stress degradation , Plasma processing
Note :
01
Language :
انگليسي
Link To Document :
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