DocumentCode :
23075
Title :
Charge Trapping Properties of Alternative High-k Dielectrics in MOS Devices
Author :
Daniel M. Fleetwood استاد راهنما , Bridget R. Rogers استاد مشاور , Robert A. Weller استاد مشاور
University :
Vanderbilt University
Grade :
نامعلوم
Major :
PhD )Materials Science and Engineering(
Number of pages :
0
Publish Date :
2006
Keyword :
long-term reliability , alternative dielectrics , trap charge density , Hydrogen , microelectronic devices
Note :
01
Language :
انگليسي
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=17&DC=23075
