DocumentCode :
23316
Title :
Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology
Author :
John Papapolymerou استاد مشاور , Joy Laskar استاد مشاور , John D. Cressler استاد راهنما
University :
Georgia University Of Technology
Grade :
نامعلوم
Major :
Master of Science )Electrical and Computer Engineering(
Number of pages :
0
Publish Date :
2005
Keyword :
dc Characteristics , SiGe , Silicon-Germanium , technology generation , Static Characteristics , Scaling , cryogenic , HBT , Heterojunction , low temperature
Note :
01
Language :
انگليسي
Link To Document :
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