DocumentCode :
23546
Title :
Study of design tradeoffs of DRAM and SRAM memories, using HSPICE computer simulation
Author :
Cornely Roy H. استاد راهنما , Misra Durgamadhab استاد مشاور
University :
Van Houten Library )new Jersey Institute Of Technology(
Grade :
نامعلوم
Major :
Master of Science )Electrical Engineering(
Number of pages :
0
Publish Date :
2004
Keyword :
Semiconductors , Random Access Memory , Bit line capacitance
Note :
01
Language :
انگليسي
Link To Document :
بازگشت