DocumentCode :
3767
Title :
GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration
Author :
Jokerst Nan M استاد مشاور , Doolittle W. Alan استاد مشاور , Brown April S. استاد راهنما
University :
Georgia Institute Of Technology
Grade :
دكتري
Major :
Doctor of Philosophy
Number of pages :
0
Publish Date :
2003
Keyword :
strain analysis , Integration , MSM , GaN , Quantum dot , MBE
Note :
01
Language :
انگليسي
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=17&DC=3767
