• DocumentCode
    3767
  • Title

    GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration

  • Author

    Jokerst Nan M استاد مشاور , Doolittle W. Alan استاد مشاور , Brown April S. استاد راهنما

  • University
    Georgia Institute Of Technology
  • Grade
    دكتري
  • Major
    Doctor of Philosophy
  • Number of pages
    0
  • Publish Date
    2003
  • Keyword

    strain analysis , Integration , MSM , GaN , Quantum dot , MBE

  • Note
    01
  • Language
    انگليسي