Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates
Author :
Steven A. Ringel استاد راهنما
University :
OhioLINK ETD
Grade :
دكتري
Major :
Doctor of Philosophy )Ohio State University, Electrical Engineering(
Number of pages :
0
Publish Date :
2005
Keyword :
Transmission electron microscopy , TEM , Molecular Beam Epitaxy , metal organic chemical vapor deposition , electron beam induced current , EBIC , Defects , MOCVD , MBE
