DocumentCode :
5767
Title :
INVESTIGATION AND CHARACTERIZATION OF AlGaN/GaN DEVICE STRUCTURES AND THE EFFECTS OF MATERIAL DEFECTS AND PROCESSING ON DEVICE PERFORMANCE
Author :
Leonard J. Brillson استاد راهنما
University :
OhioLINK ETD
Grade :
دكتري
Major :
Doctor of Philosophy )Ohio State University, Electrical Engineering(
Number of pages :
0
Publish Date :
2002
Keyword :
Devices , HEMT , HFET , memory effect , transistor , fabrication , HBT , III-Nitride , characterization , AlGaN/GaN , CLS , AlGaN , cathodoluminescence , GaN , LEEN , Heterojunction , ohmic , heterostructure , yellow luminescence , Defects , threading dislocation , Interfaces
Note :
01
Language :
انگليسي
Link To Document :
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