مرکز منطقه ای اطلاع رساني علوم و فناوري - Formation of N P Junctions Using In-situ Phosphorus Doped Selective Si1-xGex Alloys for CMOS Technology Nodes Beyond 50nm.

DocumentCode :

8924

Title :

Formation of N P Junctions Using In-situ Phosphorus Doped Selective Si1-xGex Alloys for CMOS Technology Nodes Beyond 50nm.

Author :

Mehmet C Ozturk استاد راهنما

University :

Raleigh North carolina state university

Grade :

نامعلوم

Major :

PhD )Electrical Engineering(

Number of pages :

Publish Date :

2004

Keyword :

BTBT Tunneling , gated diode , Raised source and drain , SiGe , pelective Epitaxial growth , In-situ phosporus doping

Note :

Language :

انگليسي

Link To Document :