DocumentCode
8924
Title
Formation of N P Junctions Using In-situ Phosphorus Doped Selective Si1-xGex Alloys for CMOS Technology Nodes Beyond 50nm.
Author
Mehmet C Ozturk استاد راهنما
University
Raleigh North carolina state university
Grade
نامعلوم
Major
PhD )Electrical Engineering(
Number of pages
0
Publish Date
2004
Keyword
BTBT Tunneling , gated diode , Raised source and drain , SiGe , pelective Epitaxial growth , In-situ phosporus doping
Note
01
Language
انگليسي
Link To Document