Title :
Breakdown and Reliability of CMOS Devices with Stacked Oxide/Nitride and Oxynitride Gate Dielectrics Prepared by RPECVD
Author :
Gerald Lucovsky استاد مشاور , Veena Misra استاد مشاور , John Hauser استاد مشاور , Carlton Osburn استاد راهنما
University :
Raleigh North carolina state university
Major :
PhD )Electrical Engineering(
Keyword :
Gate dielectrics , TDDB breakdown , Reliability
