Title :
Germanosilicide Contacts to Ultra-shallow P N Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys
Author :
Mehmet C. Ozturk استاد راهنما , John R. Hauser استاد مشاور , Carlton Osburn استاد مشاور , Gregory N. Parson استاد مشاور
University :
Raleigh North Carolina Statae University
Major :
PhD )Electrical Engineering(
Keyword :
germanosilicide , silicide , silicon germanium , contact resistance , ultra-shallow junction , source drain , CMOS
