Recent Progress in the Preparation of a-S1-xCx:H by Thermal Evaporation in Glow discharge Decomposition of Methane

Hydrogenated amorphous silicon carbide, a-S1-xC x :H has been prepared by thermal evaporation of silicon, then the Si films were exposed of discharge (G.D) decomposition of methane to allow both C-and H-atoms to be embedded in the silicon thin films. Different G.D times were attempted to adjust various values of C and H atoms in the system a-Si1-x Cx: H .The amorphous structure of the as-deposited films was confirmed by x-ray diffraction and the hydrogenation process was confirmed by IR absorption spectra. The preparation parameters have been adjusted to give the optimum required composition.