Dependence of Self-Heating Effect on Substrate in AlGaN/GaN HEMT Devices

Dependence of Self-Heating Effect on Substrate in AlGaN/GaN HEMT Devices

in this paper, the effect of substrate on thermal resistance of AlGaN/GaN HEMT devices is investigated. The results of this investigation show that device self-heating isstrongly affected by the thickness and material type of substrate and the thermal conductivity of materials utilized in device structure. Sapphire, SiC and GaN substrates are usually used inAlGaN/GaN HEMT devices. For AlGaN/GaN HEMT device, we have investigated that how the use of these substrates influence heating characteristics of the device