شماره ركورد كنفرانس
1730
عنوان مقاله
Nichols Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits
عنوان به زبان ديگر
Nichols Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits
پديدآورندگان
Davoodi Bita نويسنده , Faez Rahim نويسنده , Haji Nasiri Saeed نويسنده , Farrokhi Maryam نويسنده
تعداد صفحه
4
كليدواژه
interlayer via , Nichols stability criterion , Single wall carbon nanotubes , interconnects , Transmission line method
سال انتشار
2012
عنوان كنفرانس
بيستمين كنفرانس مهندسي برق ايران
زبان مدرك
فارسی
چكيده لاتين
Nichols stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3D-VLSI circuits is investigated for thefirst time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry ofeach tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable
شماره مدرك كنفرانس
4460809
سال انتشار
2012
از صفحه
1
تا صفحه
4
سال انتشار
2012
لينک به اين مدرک