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Electrical characteristics enhancement of Au/n-GaAs Schottky barrier diode using sulfur passivation of GaAs surface by (NH4)2SX sulfurization technique

علیرضا صالحی , هدیه محمودنیا

sulfur , passivation , gallium arsenide Schottky barrier diodes , ideality factor , Schottky barrier height , reverse saturated current , (NH4)2SX

ايران

جواد به نژاد

sulfur-passivation; gallium arsenide Schottky barrier diodes; ideality factor; Schottky barrier height; reverse saturated current; (NH4)2SX