3632

Investigating the Electronic Properties of Oxygen Vacancies in Anatase TiO2: An ab initio Study

Maryam KeshavarzAfshar , Negin Manavizadeh ,

resistive switching , DFT , metal oxides , Hubbard-like term, anatase TiO2, oxygen vacancy, charge transition levels.

ايران

Ebrahim Nadimi

resistive switching; DFT; metal oxides; Hubbard-like term, anatase TiO2, oxygen vacancy, charge transition levels.