شماره ركورد كنفرانس :
3632
عنوان مقاله :
Investigation of AlGaN/GaN HEMT electrical characteristics with recessed insulator and barrier at both source and drain sides
پديدآورندگان :
Seyed hamid Zahiri , Amir Nejati ,
كليدواژه :
GaN HEMT , Drain Current , Output Power Density , DC Trans , Conductance , Gate Capacitance
كشور :
ايران
نويسنده :
Seyed mohammad Razavi
كلمات كليدي :
GaN HEMT; Drain Current; Output Power Density; DC Trans-Conductance; Gate Capacitance
لينک به اين مدرک :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=36&DC=174218