Facile synthesis of nonmetal-doped graphitic carbon nitride polymers

Graphitic carbon nitride (g-C3N4), a fascinating polymeric organic semiconductor, has recently attracted worldwide attention because of its potential applications in solar energy conversion and environmental purification. Generally, chemical doping with foreign anion elements is an effective strategy to modify the electronic structures of g-C3N4 as well as their surface properties, thus improving their photocatalytic performance. In this study, in situ sulfur-doped carbon nitride (g-CNS) materials was prepared by a one-pot green synthetic approach using a simple organosulfur compound, thiourea as a precursor. The prepared materials were subjected to several characterizations such as X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR) techniques. The XRD and SEM results indicated that the prepared sample possessed a sheet-like structure and graphite carbon nitride was well produced. Based on EDX spectrum the existence of elemental C, N, and S clearly confirms in the resultant product.