شماره ركورد كنفرانس
3834
عنوان مقاله
ELECTRONIC PROPERTIES OF SILICON CARBIDE NANOSHEET
پديدآورندگان
Delavari Najme Department of Physics, Faculty of Science, University of K.N.Toosi, Tehran Iran , Jafari Mahmoud jafari@kntu.ac.ir Department of Physics, Faculty of Science, University of K.N.Toosi, Tehran Iran;
تعداد صفحه
2
كليدواژه
silicon carbide , physical properties
سال انتشار
1395
عنوان كنفرانس
نوزدهمين سمينار شيمي فيزيك ايران
زبان مدرك
انگليسي
چكيده فارسي
Different structures of silicon carbide has been synthetized. In this paper, we ve studied the physical properties of silicon carbide nanosheet, using the Density Functional Theory (DFT). The result have shown that this structure is a semiconductor with a wide band gap. The value that we ve achieved was 2.5851 eV which is in agreement with previous calculations.
كشور
ايران
لينک به اين مدرک