A novel DC contact RF MEMS switch with high actuation area and low actuation voltage

RF MEMS switches have attracted more attention in recent years. They are widely used in telecommunication systems, radars, satellites and medical and industrial applications. In this paper, a DC contact RF MEMS switch is proposed with a new mechanical structure which reduces the actuating voltage to 7V which is better than many other DC contact RF MEMS switches introduced already. New switch structure causes the spring constant to decrease to 4.4N/m. The switch is made of gold with the thickness of 2um. The proposed structure is simulated by Comsol in order to evaluate mechanical specifications. The maximum Von Mises stress of the switch is 9.03MPa which is acceptable for silicon made structures.