پديدآورندگان :
Hedayat Seyed Norolah Sn.hedayat@yahoo.com Department of physics, Faculty of science, Urmia University, Urmia, Iran , Ahmadi Mohammad Taghi 1Department of physics, Faculty of science, Urmia University, Urmia, Iran , Savari Fariba 1Department of physics, Faculty of science, Urmia University, Urmia, Iran
كليدواژه :
Single Electron Transistor , Double Barrier , Quantum Current , Fullerene , Island.
چكيده فارسي :
Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterials in the carbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductor materials, from the elements in the periodic groups of II-VI, III-V or IV-VI. The basis of Single electron devices (SEDs) is controllable single electron transfer between small conducting “islands”. In this paper quantum current of double barrier single electron transistor (SET) is modelled and models current-voltage characteristic based on quantum transport and the electronic properties due to the dependence on structural parameter are analyzed.
