شماره ركورد كنفرانس :
3926
عنوان مقاله :
Drain Breakdown Voltage Model of Fully-Depleted SOI Four-Gate MOSFETs
پديدآورندگان :
Mohammadi Hossein h.mohamadi@eng.ukm.my PhD Student Department of Electrical, Electronic and Systems Engineering Universiti Kebangsaan Malaysia 43600 UKM Bangi, Malaysia , Abdullah Huda huda@eng.ukm.my Associate. Prof. Department of Electrical, Electronic and Systems Engineering Universiti Kebangsaan Malaysia 43600 UKM Bangi, Malaysia , Dee Chang Fu deechangfu@eng.ukm.my Associate. Prof. Institute of Microengineering and Nanoelectronics (IMEN) Universiti Kebangsaan Malaysia 43600 UKM Bangi, Malaysia
كليدواژه :
G4 , FET , Analytical model , Surface potential , Drain Breakdown voltage , Three , dimensional modeling
عنوان كنفرانس :
بيست و چهارمين كنفرانس مهندسي برق ايران
چكيده فارسي :
The purpose of this research is to evaluate the drain breakdown voltage of n-channel FD-SOI four-gate MOSFETs. Our approach is on the basis of three dimensional solution of Poisson’s equation with proper boundary conditions for the surface potential and electrical field distribution. The model is extended to derive a model for the drain breakdown voltage which can predict the drain breakdown voltage versus bias conditions and device parameters including silicon film thickness, oxide layer thickness and channel doping concentration. The validity of the model is illustrated by comparison between the obtained results and numerical simulation.
