پديدآورندگان :
Saberhosseini S. Shirin Sh.Saberhosseini@stu.nit.ac.ir Research Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran. , A. Ganji Bahram Baganji@nit.ac.ir Research Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran. , Razeghi Alieh Razeghi.Alieh@nit.ac.ir Research Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran. , Mahmoudi Zohre Mahmoudi@stu.nit.ac.ir Research Lab. for Micro Nano Electronic, Electrical Computer Engineering Department, Babol University of Technology, Babol, Iran.
كليدواژه :
Spiral Inductor , MEMS Technology , Quality Factor , Resonance Frequency , Modeling of Inductor.
چكيده فارسي :
This paper presents design, modeling and simulation of spiral MEMS inductor, that can be used in RF circuits. The spiral inductor is designed on silicon substrate using MEMS technology to reduce the metal and substrate losses of inductor. At first, MEMS spiral inductor simulates with Intellisuite software then model of inductor is extracted. Also, the model of inductor is simulated by ADS and results are compared. Simulation results for the proposed MEMS spiral inductor show the maximum Q-factor of 28, the self resonance frequency of 59 GHz and the inductance of 0.33nH. The dimension of the inductor is 280*220μm2, which has less area on chip than other works.
