شماره ركورد كنفرانس :
3926
عنوان مقاله :
Design and analysis of GRIN-SCH-SQW transistor laser
پديدآورندگان :
Hosseini Mohammad smohammad.hsi@aut.ac.ir Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran , Kaatuzian Hassan hsnkato@aut.ac.ir Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran , Taghavi Iman eimantaghavi@gatech.edu Electrical and Computer Engineering Department Georgia Institute of Technology Atlanta, Ga, 30332
كليدواژه :
transistor laser , single Quantum well , GRIN , SCH , built , in potential.
عنوان كنفرانس :
بيست و چهارمين كنفرانس مهندسي برق ايران
چكيده فارسي :
Graded index separate confinement heterostructure (GRIN-SCH) has been suggested for n-InGaP/p+-GaAs+iInGaAs/i-GaAs single quantum well (SQW) transistor laser (TL) with linearly graded in base region ( : 0 → 0.029 emitter to QW and : 0.038 → 0.05 from QW to collector). Charge control model is used to analyze the proposed device. The model has been modified to describe graded effects. Due to using graded base structure, base transit time reduces from 1.4 ps to 0.8 ps by the induced built-in potential, resulting in an increase of 3dB bandwidth in a device with an emitter size area of 4000 µm2 and 150 µm cavity length
