Investigation of silanized- povidone/SiO2 nanocomposite by deconvolution of the Si2s, C1s and O1s XPS spectra

Investigation of silanized- povidone/SiO2 nanocomposite by deconvolution of the Si2s, C1s and O1s XPS spectra

In the present study, povidone-SiO2 nanocomposite was synthesized by a silane coupling agent as a cross-linking agent and then deposited on the p-type Si substrate. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were applied to investigation of the nanocomposite structure. Deconvoluted Si2s, C1s and O1s core levels proved that the strong chemical interactions were created between organic and inorganic phases. The resulted nanocomposite film formed a very fine grain size and very low surface roughness of 0.036 nm which is one of the key factors for gate dielectric film in field-effect-transistors.

In the present study, povidone-SiO2 nanocomposite was synthesized by a silane coupling agent as a cross-linking agent and then deposited on the p-type Si substrate. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were applied to investigation of the nanocomposite structure. Deconvoluted Si2s, C1s and O1s core levels proved that the strong chemical interactions were created between organic and inorganic phases. The resulted nanocomposite film formed a very fine grain size and very low surface roughness of 0.036 nm which is one of the key factors for gate dielectric film in field-effect-transistors.