ويژگيهاي الكتريكي، مكانيكي و اپتيكي فيلمهاي نازك نيتريد مس با آلايش تيتانيوم

Ti doped Cu3N (Ti:Cu3N) thin films were deposited on Si(111), quartz, glass slide and stainless steel substrates using a binary Ti13Cu87 alloyed target by reactive DC magnetron sputtering at nitrogen ambient. This study provides insight into the importance of nitrogen pressure on the characteristic of the as-deposited Ti:Cu3N thin films. Structural property of these films is identified by X-ray diffraction (XRD) technique. The observed phases are; cubic structure of Ti doped Cu3N (Ti:Cu3N) and fcc structure of Cu. The electrical resistivity of the films, deduced from measurement using four- point probe, was depending on films’ structure and chemical composition. Films’ hardness, measured by Vickers’s microhardness test, was strongly depending on films’ composition. Refractive index (n), extinction coefficient (k) and Film thickness (d) are calculated using Visnear IR transmittance. Semiconducting transition process and bandgap value are extracted from absorption coefficient. Ti addition and subsequent excess of interstitial nitrogen (N-rich) result in lattice constant expansion in comparison with Ti free Cu3N and optical energy gap widening.