Development of CZTSSe thin film based solar cells

In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on Cu2ZnSn (SxSe1-x)4 (CZTSSe) looks promising. Cu2ZnSn (SxSe1-x)4 (CZTSSe) is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV [01] with a large absorption coefficient over 104 cm-1). Indeed, the performance of these cells exceeded 30% in recent years.In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on CZTSSe and thus evaluate the electrical efficiency η for typical structures of ZnO / i- ZnO / CdS / CZTSSe. Furthermore, the influence of adding MoS2 as another absorber layer is studing.