Influence of annealing temperature on the waste of electrical energy of zinc oxide films

The aim of this work is to investigate the waste of electrical energy of zinc oxide films under different post- annealing temperatures from 400 - 600ºC. It can be seen that the values of N/m* of films annealed at 400 ºC have maximum values 1.51x1058 m-3kg-1. It is shown that the waste of electrical energy as heat at 400 ºC has maximum value and with increasing energy it increases. It is also found that energy loss by the free charge carriers when traversing the bulk and surface of films at 400 ºC has a maximum value and it increases with energy.