شماره ركورد كنفرانس :
4226
عنوان مقاله :
Preparation of nanoporous silicon structure for antireflection applications
پديدآورندگان :
Mahmoudi Sh shirin.mph88@yahoo.com Materials and Energy Research Center , Eshraghi MJ shirin.mph88@yahoo.com Materials and Energy Research Center
تعداد صفحه :
3
كليدواژه :
metal , assisted chemical etching , porous silicon , antireflection properties
سال انتشار :
1396
عنوان كنفرانس :
سيزدهمين سمينار ملي سالانه الكتروشيمي ايران
زبان مدرك :
انگليسي
چكيده فارسي :
A simple and effective method is presented for producing light-emitting nanoporous silicon (PSi). Porous silicon structure was fabricated via metal-assisted chemical etching procedure. The effect of molar etching rate (𝜌) was investigated in order to preparing various nanoporous structures. The field emission electron microscopy (FE-SEM) results showed that all etched samples had nanoporous structure and the sample which was immersed into solution with 𝜌~80% had smallest porosities which are measured by digimizer software about 88 nm. Also, the reflectivity as low as 5% could be achieved using this molar etch rate.
كشور :
ايران
لينک به اين مدرک :
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