پديدآورندگان :
Ghezellou Misagh Shahrood University of Technology- Faculty of Physics and Nuclear Engineering, 361999516, Shahrood, Iran , Haratizadeh Hamid Shahrood University of Technology- Faculty of Physics and Nuclear Engineering, 361999516, Shahrood, Iran
چكيده فارسي :
This paper presents synthesis of Gallium Oxide nanostructures. These nanostructures were synthesized via
VS approach using Chemical Vapor Deposition (CVD) method. High purity metallic Gallium (Ga) and Oxygen
gas (O2) were used as precursors for Gallium and Oxygen respectively. Nanostructuers were formed on quartz
substrate. The surface morphology and structural properties of nanostructured thin films have been
characterized by X-ray differaction and scannig electron microscopy. XRD pattern proves formation of Ga2O3
structure. SEM images show that size of these nanorods are about 150 nm.
