شماره ركورد كنفرانس
4334
عنوان مقاله
Fabrication of field-effect transistor (FET) based on ZnO nanowire/graphene nanoribbon heterostructures
پديدآورندگان
Akhtarianfar Seyed Farshad Institute of Nanoscience and Nanotechnology, University of Kashan 87317-51167 , Iran-4Optomechatronics Research Institute, Pusan National University (PNU), Busan 46241, Republic of Korea , Won Hong Suck Department of Cogno-Mechatronics Engineering, Department of Optics and Mechatronics Engineering, Pusan National University (PNU), Busan 46241, Republic of Korea , khayatian Ali Department of Physics, University of Kashan, Kashan 87317-51167, Iran , Almasi kashi Mohammad Institute of Nanoscience and Nanotechnology, University of Kashan 87317-51167 , Iran-Department of Physics, University of Kashan, Kashan 87317-51167, Iran
تعداد صفحه
1
كليدواژه
field-effect transistor , heterostructures
سال انتشار
1396
عنوان كنفرانس
پنجمين گردهمايي بين المللي سالانه سيستم هاي ابعاد پايين
زبان مدرك
انگليسي
چكيده فارسي
We present a fabrication of a field-effect transistor device based on a single ZnO nanowire and graphene
nanoribbon heterostructures. We demonstrate that it is possible to fabricate a graphene nanoribbon using a
single ZnO nanowire as a shadow mask for oxygen reactive ion etching. Au electrodes were also coated on
two sides of ZnO nanowire using UV photolithography. The fabricated nanowire/graphene nanoribbon
heterostructure was electrically analysed to obtain field effect properties of device.
كشور
ايران
لينک به اين مدرک