شماره ركورد كنفرانس :
4334
عنوان مقاله :
Relative Intensity Noise Analysis of Quantum Dot Semiconductor Lasers
پديدآورندگان :
Mirsoheil S. S. School of Engineering-Emerging Technologies, University of Tabriz, Tabriz, Iran , Sheikhey M. M. Department of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran , Baghban H School of Engineering-Emerging Technologies, University of Tabriz, Tabriz, Iran
تعداد صفحه :
1
كليدواژه :
Quantum Dot
سال انتشار :
1396
عنوان كنفرانس :
پنجمين گردهمايي بين المللي سالانه سيستم هاي ابعاد پايين
زبان مدرك :
انگليسي
چكيده فارسي :
In this article, we develop a numerical and an analytical method to investigate the relative noise intensity (RIN) specifications of self-assembled quantum dot laser. Based on a set of coupled rate equation including the contribution of the Langevin noise sources, the effect of injection current on the RIN properties is obtained. Results show that RIN decreases with increasing the injection current while the numerical and the analytical simulations describe a considerable agreement between the obtained results
كشور :
ايران
لينک به اين مدرک :
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