پديدآورندگان :
Movla Hossein Research Institute for Applied Physics and Astronomy , University of Tabriz, Tabriz , Babazadeh Mohammad Centre for Organic Photonics Electronics, University of Queensland, Brisbane 4072, Australia , Abdollahzadeh Baghaei Sattar Research Institute for Applied Physics and Astronomy , University of Tabriz, Tabriz , Shirzad Alireza Research Institute for Applied Physics and Astronomy , University of Tabriz, Tabriz
چكيده فارسي :
In this paper, the influence of the intrinsic absorber layer thickness on the device characteristics parameters
of AgInSe2 thin film solar cells has been investigated. Simulation results showed that for 100 nm, the cell
efficiency is maximum and about %12.5. This result reveals that the J-V curves for both 100 nm and 500 nm
have similar patterns with a shift in 100 nm thickness. The variation of capacitance-voltage and quantum
efficiency for 100 nm and 500 nm have been calculated. Simulation results showed that thickness of intrinsic
absorber layer has impressive effects on the electrical properties of the solar cell.
