پديدآورندگان :
Fadakar Navroud Fahimeh University of Sistan and Baluchestan, Department of Physics, P. Code 9816745785, Zahedan, Iran , Zolfaghari Mahmoud University of Sistan and Baluchestan, Department of Physics, P. Code 9816745785, Zahedan, Iran
چكيده فارسي :
ZnO is a wide band gap semiconductor, with Eg≈ 3.37 eV. In recent years it has attracted enormous interest because
of its novel applications in many different fields. The aim of this study is to shape the Mn doped ZnO into nanoballs
using solid state reaction method. For achieving the ball type morphology we used mercapto succinic acid as a
capping agent. From vibrating sample magnetometer (VSM) study we observed that, increasing concentration of
Mn impurity causes magnetic behavior of the samples increases.
