پديدآورندگان :
Hedayat Seyed Norollah Department of Physics, Faculty of Science, Urmia University, 75175, Urmia, Iran , Ahmadi Mohammad Taghi 1Department of Physics, Faculty of Science, Urmia University, 75175, Urmia, Iran , Razali Bin Ismail Razali Bin Ismail Electronics and Computer Engineering Department, Faculty of Electrical Engineering, University Technology Malaysia, 81310 Johor Bahro, Malaysia
كليدواژه :
bilayer graphene , transmission coefficient , transistor , Schotcky.
چكيده فارسي :
Graphene is characterized with amazing carrier transport property and high sensitivity at the single molecule level, making them great as resources used in Nano electronic applications. Bilayer graphene nanoribbons consist of two monolayers graphene stacked in two possible configurations. Bilayer graphene nanoribbons can be employed in digital electronics because its band gap can be varied by means of an external perpendicular electric field, and can induce a significant band gap between the valence and conduction bands turning it from a zero-gap semiconductor to an insulator. The present research models transmission coefficient of the Schotcky structure in the graphene-based transistor based on semiconducting channel width and then analysis its quantum properties given dependence on structural parameter.
