p238. شبيه سازي پوشش هاي چند لايه اي ضد بازتاب

Simulation of anti-reflection multilayer coatings

در اين مقاله به بررسي تاثير ضريب شكست و تعداد و ضخامت فيلم هاي نازك بر روي ميزان بازتاب از بستر سيليكون با ضريب شكست 3.5 در محدوده ي طول موجي 400 تا 1000 نانومتر به ازاي طول موج مركزي 632 نانو متر در حالت تابش عمودي از طريق شبيه سازي و كاربرد آن در سلول خورشيدي مي پردازيم.ابتدا با قرار دادن يك فيلم نازك از جنسMgF2 به ضريب شكست 1.39 وضخامت ربع طول موج مركزي يعني 158 نانومتر ميزان بازتاب در بازه طول موج مورد آزمايش را از 32% به حدود 13% مي رسانيم و بار ديگر با قرار دادن فيلم نازكي از جنس Sc2O3 به ضريب شكست 1.86 و ضخامت ربع طول موج توانستيم ميزان بازتاب را در طول موج 630 نانومتر به صفر برسانيم و نمودار V شكل به دست آمد كه براي سلول هاي خورشيدي چندان مناسب نمي باشد.براي رسيدن به يك باند پهن از طول موج كه ميزان بازتاب در آن كمترين مقدار باشد از پوشش هاي 2 ، 3 و 4 لايه بر روي سيليكون استفاده كرديم و اين باند پهن در پوشش 4 لايه براي بازه ي طول موجي 550 تا 750 نانومتر به ازاي بازتاب حدود 1% به دست آمد.

In this paper, we investigate the effect of the coefficient of refraction and the number and thickness of thin films on a silicon substrate with a refractive index of 3.5 in the wavelength range of 400 to 1000 nm in the longitudinal wavelength of 632 nm in a vertical irradiation mode by simulating and applying it to the solar cell. First, By placing a thin film of MgO2 to a refractive index of 1.39, the quarter-wavelength of the central wavelength of 158 nm yields the reflection in the wavelength range of the test from 32% to about 13%, and again by placing a thin film of Sc2 O3 the genus to a refractive index of 1.86 and a quarter-wavelength of wavelengths allowed us to measure the reflection at zero wavelengths of 630 nm, and the graph V The total was obtained not so much suitable for solar cells. In order to reach a broadband wavelength with a minimum reflectance, we used 2, 3, and 4 layers on silicon, and this broad band The 4-layer coating was obtained for a range of 550 to 750 nm for reflection of about 1%.In this paper, we investigate the effect of the coefficient of refraction and the number and thickness of thin films on a silicon substrate with a refractive index of 3.5 in the wavelength range of 400 to 1000 nm in the longitudinal wavelength of 632 nm in a vertical irradiation mode by simulating and applying it to the solar cell. First, By placing a thin film of MgO2 to a refractive index of 1.39, the quarter-wavelength of the central wavelength of 158 nm yields the reflection in the wavelength range of the test from 32% to about 13%, and again by placing a thin film of Sc2 O3 the genus to a refractive index of 1.86 and a quarter-wavelength of wavelengths allowed us to measure the reflection at zero wavelengths of 630 nm, and the graph V The total was obtained not so much suitable for solar cells. In order to reach a broadband wavelength with a minimum reflectance, we used 2, 3, and 4 layers on silicon, and this broad band The 4-layer coating was obtained for a range of 550 to 750 nm for reflection of about 1%.