Strain Effects on the Drain Current Hysteresis of Ferroelectric DGFET

Strain Effects on the Drain Current Hysteresis of Ferroelectric DGFET

The effects of biaxial strain on the drain current hysteresis of ferroelectric double gate field effect transistor (FeDGFET) have been investigated. Single layer MoS2 has been used as the channel and top-of-the-barrier model has been used to calculate drain current of FeDGFET. The results indicate that by applying strain, ON-current of the transistor increases. Besides, tensile strain decreases drain current hysteresis and increases drain-source resistance by a factor of 2 while compressive strain has an inverse effects.