شماره ركورد كنفرانس :
5320
عنوان مقاله :
In-situ Synthesis of Nitrogen-doped MoS2 Quantum Dots using Pulsed Laser Ablation in Liquid Nitrogen Medium
پديدآورندگان :
Shahi Fatemeh f.shahi.3035@aut.ac.ir Energy Engineering and Physics Department, Amirkabir University of Technology , Parvin Parviz Parvin@aut.ac.ir *Energy Engineering and Physics Department, Amirkabir University of Technology , Mortazavi Zahra z.mortazavi@sci.ikiu.ac Faculty of Science, Department of Physics, Imam Khomeini International University , Reyhani Ali reyhani@sci.ikiu.ac.ir Faculty of Science, Department of Physics, Imam Khomeini International University , Sadrzadeh Mohtada sadrzade@ualberta.ca Mechanical Engineering Department, University of Alberta , Moafi Ali ali.moafi@aut.ac.ir Energy Engineering and Physics Department, Amirkabir University of Technology
كليدواژه :
MoS2 quantum dots , Pulsed laser ablation , Liquid nitrogen , Nitrogen doping
عنوان كنفرانس :
سومين كنفرانس ملي ميكرونانوفناوري
چكيده فارسي :
Nitrogen doped MoS2 quantum dots (N- MoS2 QDs) are fabricated by pulsed laser ablation (PLA) process in liquid nitrogen (LN2). In fact, not only LN2 facilitates the condensation of the laser-induced plasma plume to produce MoS2 QDs and some by-products such as nanosheet, but also provides an optimum condition for N-doped MoS2 synthesis as a p-type semiconductor. The structural and optical properties synthesized products are investigated using transmission electron microscopy (TEM), UV−vis−near infrared absorption spectroscopy and photoluminescence Spectroscopy techniques. The TEM image shows formation of MoS2 QDs. The Tuck plot is observed for a direct band-gap MoS2 QDs (4.18 eV). Thus, PLA provides a single-stage way to clean and green synthesis the MoS2 QDs suspension without a need of high vacuum devices and additional chemical components. Moreover, doping provides an advantage to engineering the optical and electrical characteristics of MoS2.
