شماره ركورد كنفرانس :
5328
عنوان مقاله :
Investigation of structural and electronic properties of GaN Nanosheet
پديدآورندگان :
Ashouria Tara tara_ashouri@email.kntu.ac.ir K. N. Toosi University of Technology, Tehran, Iran , Jalili Seifollah sjalili@kntu.ac.ir K. N. Toosi University of Technology, Tehran, Iran , Ghassemi Mahjan Mohammad mahjani@kntu.ac.ir K. N. Toosi University of Technology, Tehran, Iran
كليدواژه :
Density functional theory , Two , dimensional Gallium nitride , Electronic properties, structural properties
عنوان كنفرانس :
بيست و سومين كنفرانس شيمي فيزيك انجمن شيمي ايران
چكيده فارسي :
We have performed the first-principles calculations on the structural and electronic properties of the 2D GaN nanosheet. In this work, the electronic properties of pristine GaN monolayer have been studied using a first-principles calculation based on DFT. The results unveil that these semiconductor monolayer sheets are promising materials for electrical sensors and due to their tunable bandgap semiconductor on the application of the electric field
