Effect of Multiplication Region Mole Fraction on Characteristics ofAPDs

Abstract- In this paper we investigate the performance of avalanche photodiode considering the variation of multiplication region mole fraction. We show that excess noise factor and breakdown voltage, at a given bias voltage, increase for higher mole fraction of Al in AlxGa1-xAs-APDs but on the other hand, performance factor and mean gain decrease inversely. For calculation of the static characteristics of AlxGa1-xAs-APDs we use the dead space multiplication theory (DSMT). Index Terms: Avalanche photodiodes (APDs), recurrence equation, AlxGa1-xAs, nonlocalized ionization coefficient. PACS: avalanche photodiode (040.1345), optoelectronics (250.1345)