Synthesis and surface modification of the zinc sulfide quantum dots utilizable in molecular imprinting polymers capped quantum dots sensors

In this study, zinc sulfide (ZnS) semiconductor quantum dots (QDs) were successfully synthesized via an aqueous method and then modified its surface utilizing 3-mercaptopropyltrimethoxysilane (MPTS) as capping agent. The structural, morphological and photo-physical properties were investigated using comprehensive characterization techniques such as x-ray diffraction (XRD), Fourier transform infrared spectrometry (FT-IR) and photoluminescence (PL) spectrometer. The XRD patterns showed a cubic zinc blende crystal structure and a crystallite size of about 2 - 3 nm using Scherrer’s equation. Also, the FT-IR spectrum confirmed the interaction of the capping agent groups with ZnS nanoparticles. According to the photoluminescence spectra, it was found that the emission becomes less intensive in the presence of the capping agent. This MPTS capped ZnS quantum dots would be a promising candidate in fluorescent sensors.