A 3-ppm/°C Bandgap Voltage Reference Using MOSFETs in Strong Inversion Region

A 3-ppm/°C Bandgap Voltage Reference Using MOSFETs in Strong Inversion Region

An accurate bandgap voltage reference (BVR) which utilizes the thermal behavior of the threshold voltage and electron mobility of NMOS transistors is presented in thispaper. The circuit is based on a well-known addition of a proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) references. ThePTAT circuit uses the temperature coefficient (TC) of the electron mobility and the CTAT circuit uses the TC of thethreshold voltage to generate accurate PTAT and CTAT currents. The circuit is designed in a 0.18μm CMOS technology.Simulation results show a temperature coefficient (TC) of 3ppm and power supply rejection ratio (PSRR) of 77dB at DC frequency.