Author/Authors :
Tombak, Ahmet Batman University - Faculty of Art Science - Department of Physics, Turkey , Ocak, Yusuf Selim University of Dicle - Faculty of Education - Department of Science, Turkey , Kılıçoğlu, Tahsin Batman University - Faculty of Art Science - Department of Physics, Turkey , Kılıçoğlu, Tahsin Dicle University - Faculty of Science - Department of Physics, Turkey
Title Of Article :
The series resistance and the interface state density properties of a Cr/n–Si Schottky barrier diode prepared by pulsed DC sputtering
Abstract :
A Cr/n–Si Schottky barrier diode was obtained by pulsed DC sputtering technique. The electrical parameters of the diode such as ideality factor, barrier height and series resistance values were determined using the functions proposed by Cheung and Norde. It was seen that the diode has an ideality factor of 1.07 and a barrier height of 0.60 eV. The interface state density distribution of the diode was calculated using the current–voltage (I–V) data. In addition, the capacitance–voltage (C–V) and the capacitance–frequency (C–f) characteristics of the diode were analyzed.
NaturalLanguageKeyword :
Pulsed DC sputtering , Schottky diode , Series resistance , Interface state density , Barrier height
JournalTitle :
dicle university journal of institute of natural and applied science
