Author/Authors
KARADUMAN, Irmak Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , DEMİREL, Nevin Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , YILDIZ, Dilber Esra Hitit Üniversitesi - Fen-Edebiyat Fakültesi - Fizik Bölümü, Turkey , ACAR, Selim Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey
Title Of Article
The Co Gas Sensing Properties of Al/Al2o3/P-Si Structure
شماره ركورد
15812
Abstract
In this study, The gas sensing properties of Al/Al2O3/p-Si structure was investigated. Al2O3 was made in by atomic layer deposition (ALD) method. The temperature dependent electrical characterization of produced sample was performed in gas atmosphere (carbon monoxide and carbon dioxide) at different temperatures (300-450 K) and different gas concentrations (50-2000 ppm ). The results show that the reaction between the gas molecules and the surface of the sample is based on the charge transfer mechanism. The response and recovery times are calculated 11 and 16 s, respectively.
From Page
79
NaturalLanguageKeyword
Gas Sensor , Metal Oxide Semiconductor , CO
JournalTitle
Journal Of Polytechnic
To Page
84
JournalTitle
Journal Of Polytechnic
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