Author/Authors
DAĞDELEN, Fethi Fırat Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , ÖZER, Metin Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey
Title Of Article
Investigation of Electronic Parameters of Ag/N-Gap Schottky Barrier Diode
شماره ركورد
15814
Abstract
An Ag/n-GaP Schottky barrier diode was fabricated in vacuum with metal evaporating method. The electronic parameters were investigated by current-voltage (I-V) measurements at different temperatures. The electronic parameters such as ideality factor, barrier height and series resistance were determined from forward bias I-V measurement method and Cheung’s functions at different temperatures. Results indicate that the barrier height of Ag/n-GaP diode increased with increase in temperature, while the ideality factor decreased. İdeality factor, barrier height and series resistance values are determined 2.01, 0.424 eV and 4.284 kΩ at 298 K, respectively.
From Page
93
NaturalLanguageKeyword
Schottky barrier , ideality factor , series resistance , n , GaP
JournalTitle
Journal Of Polytechnic
To Page
97
JournalTitle
Journal Of Polytechnic
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