kars durukan, ilknur gazi university - life sciences research and application center, Ankara, Turkey , öztürk, mustafa kemal gazi university - photonics research center - department of physics, Ankara, turkey , özçelik, süleyman gazi university - photonics research center - department of physics, Ankara, turkey , özbay, ekmel bilkent university - department of physics, Ankara, turkey

Analysis of the Mosaic Defects in Graded and Non Graded InxGa1‐xN Solar Cell Structures

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In this study, graded (A) InxGa1‐xN (10.5 ≤ x ≤ 18.4) and non graded (B)InxGa1‐xN (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrateusing the Metal Organic Chemical Vapour Deposition (MOCVD) technique. Thestructural, optical and electrical features of the grown InGaN/GaN solar cellstructures are analyzed using High Resolution X‐Ray Diffraction (HRXRD),Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV)measurements. According to the HRXRD results; it is determined that the InGaNlayer of the graded structure has a lower FWHM (Full width at half maximum)value. From the PL measurements, it is observed that the GaN half‐width peakvalue of the graded sample is narrower and the InGaN peak width value of thegraded sample is larger. From UV measurements, that the graded sample has agreater band range. JV measurements determine that the performance of thegraded structure is higher.

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InGaN , GaN , Solar cell , MOCVD , HRXRD , UV , XRD

Journal Of Natural an‎d Applied Sciences

240