Sönmezoğlu, Savaş Karamanoğlu Mehmetbey Üniversitesi - Kamil Özdağ Fen Fakültesi - Fizik Bölümü, Turkey , Akın, Seçkin Karamanoğlu Mehmetbey Üniversitesi - Kamil Özdağ Fen Fakültesi - Fizik Bölümü, Turkey

The Determination of Series Resistance Parameter of Sb‐Doped TiO2 / n‐ Si MIS Structure by Capacitance‐Voltage (C‐V) Method

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In this study, the basic electrical parameters of the Sb‐doped TiO2/n‐Si MIS diode such as seriesresistance and barrier height were calculated and analyzed with the help of I‐V and C‐V characteristics. Ideality factor, barrier height and series resistance values obtained from the I‐V characteristics were determined 2.79, 0.68 eV and 4118 Ω, respectively. Barrier height and series resistance values from the C‐V characteristics were determined as 1.94 eV and 10.45 Ω, respectively. The causes of the difference between the value of barrier height obtained from the C‐V method and the value of barrier height obtained from the I‐V method may be interfacial states, series resistance effect and presence of the interfacial layer. When the interlayer is thick, the parameters obtained from the C‐V method such as series resistance and barrier height provide more accurate and reliable results than I‐V method.

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C‐V characteristic , I‐V characteristic , Series resistance , Barrier height , Interfacial states

Afyon Kocatepe University Journal Of Science an‎d Engineering

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