Author/Authors :
MERMER, Ömer Ege University - Engineering Faculty - Department of Electrical and Electronics Engineering, Turkey , MERMER, Ömer Dokuz Eylul University - Center for Fabrication and Application of Electronic Materials, Turkey , EROL, Mustafa Dokuz Eylul University - Center for Fabrication and Application of Electronic Materials - Department of Metallurgical and Materials Engineering, Turkey , BEKTAŞ, Murat Dokuz Eylul University - Center for Fabrication and Application of Electronic Materials, Turkey , ÇELİK, Erdal Dokuz Eylul University - Center for Fabrication and Application of Electronic Materials - Department of Metallurgical and Materials Engineering, Turkey
Abstract :
In this study, pure SnO2 and Ru-SnO2 thin films were deposited on Si and glass substrates via sol-gel technique for humidity sensor applications. Transparent solutions were prepared from Sn and Ru based precursors. The solutions were deposited on Si (100) and glass substrates by using spin coating technique which provides thin and smooth films. The thin films were annealed at 600°C for 1 hour in air to obtain SnO2 based films. The structural and electrical properties of the films were characterized by XRD, SEM, source/meter system respectively. The AC and DC electrical conductivity of the pure and Ru-doped SnO2 films were determined. Humidity sensing properties were measured changing the electrical resistance for different humidity levels at room temperature. The humidity adsorbtion kinetics of these films was investigated by quartz crystal microbalance (QCM) technique.
NaturalLanguageKeyword :
Ru doping , Tin oxide , Sol , gel , Humidity sensor
